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ChinaDMG7N65SCT
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DMG7N65SCT
BESCHREIBUNG
MOSFET N-CH 650V 7.7A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 7.7A (Tc) 125W (Tc) Through Hole TO-220AB (Type TH)
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
Automotive, AEC-Q101
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25.2 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
886 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB (Type TH)
Package / Case
TO-220-3
Base Product Number
DMG7N65
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMG7N65SCT
Dokumente und Medien
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Obsolescence/ EOL
1(Mult Dev EOL 2/Sep/2021)
PCN Assembly/Origin
1(Mult Dev Site Chg 6/Aug/2020)
Menge Preis
-
Stellvertreter
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