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ChinaPH16030L,115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PH16030L,115
BESCHREIBUNG
MOSFET N-CH 30V 38A LFPAK56
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 38A (Tc) 41.6W (Tc) Surface Mount LFPAK56, Power-SO8
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 4.5 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
680 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
41.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK56, Power-SO8
Package / Case
SC-100, SOT-669
Base Product Number
PH16
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
PH16030L T/R
PH16030L T/R-ND
934058819115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PH16030L,115
Dokumente und Medien
Datasheets
1(PH16030L)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PH16030L)
Menge Preis
-
Stellvertreter
-