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ChinaIPA100N08N3GXKSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPA100N08N3GXKSA1
BESCHREIBUNG
MOSFET N-CH 80V 40A TO220-FP
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 40A (Tc) 35W (Tc) Through Hole PG-TO220-FP
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2410 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP000473900
2156-IPA100N08N3GXKSA1
IPA00N08N3GXKSA1-ND
IPA100N08N3G
IPA1-ND00N08N3GXKSA1-ND
IPA100N08N3 G
IPA100N08N3 G-ND
INFINFIPA100N08N3GXKSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPA100N08N3GXKSA1
Dokumente und Medien
Datasheets
1(IPA100N08N3G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPA100N08N3G)
Simulation Models
1(MOSFET OptiMOS™ 80V N-Channel Spice Model)
Menge Preis
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