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ChinaIRFD213
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFD213
BESCHREIBUNG
MOSFET N-CH 250V 450MA 4DIP
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 450mA (Ta) Through Hole 4-HVMDIP
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
468
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
450mA (Ta)
Rds On (Max) @ Id, Vgs
2Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHARIRFD213
2156-IRFD213-HC
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRFD213
Dokumente und Medien
Datasheets
1(IRFD213)
Menge Preis
QUANTITÄT: 468
Einzelpreis: $0.64
Verpackung: Tube
MinMultiplikator: 468
Verpackung: Tube
MinMultiplikator: 468
Stellvertreter
-