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China2N7635-GA
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2N7635-GA
BESCHREIBUNG
TRANS SJT 650V 4A TO257
DETAILIERTE BESCHREIBUNG
650 V 4A (Tc) (165°C) 47W (Tc) Through Hole TO-257
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
GeneSiC Semiconductor
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc) (165°C)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
415mOhm @ 4A
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
324 pF @ 35 V
FET Feature
-
Power Dissipation (Max)
47W (Tc)
Operating Temperature
-55°C ~ 225°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-257
Package / Case
TO-257-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/GeneSiC Semiconductor 2N7635-GA
Dokumente und Medien
PCN Obsolescence/ EOL
1(Mult Devices OBS 27/Apr/2018)
Menge Preis
-
Stellvertreter
-