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ChinaMJH16006A
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MJH16006A
BESCHREIBUNG
TRANS GP BJT NPN 500V 8A
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 500 V 8 A 125 W Through Hole SOT-93 (TO-218)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
107
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
500 V
Vce Saturation (Max) @ Ib, Ic
1V @ 1A, 5A
Current - Collector Cutoff (Max)
150µA
DC Current Gain (hFE) (Min) @ Ic, Vce
5 @ 8A, 5V
Power - Max
125 W
Frequency - Transition
-
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-218-3
Supplier Device Package
SOT-93 (TO-218)
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-MJH16006A
ONSONSMJH16006A
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi MJH16006A
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 107
Einzelpreis: $2.81
Verpackung: Bulk
MinMultiplikator: 107
Verpackung: Bulk
MinMultiplikator: 107
Stellvertreter
-