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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BU426
BESCHREIBUNG
TRANS NPN 375V 6A TO218
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 375 V 6 A 115 W Through Hole TO-218
HERSTELLER
Central Semiconductor Corp
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Central Semiconductor Corp
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
6 A
Voltage - Collector Emitter Breakdown (Max)
375 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
115 W
Frequency - Transition
-
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-218-3
Supplier Device Package
TO-218
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Central Semiconductor Corp BU426
Dokumente und Medien
Datasheets
1(Power Transistors TO-218 Case NPN)
Environmental Information
1(RoHS Cert)
Menge Preis
-
Stellvertreter
-