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ChinaIPI180N10N3GXKSA1
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TEILNUMMER DES HERSTELLERS
IPI180N10N3GXKSA1
BESCHREIBUNG
MOSFET N-CH 100V 43A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 43A (Tc) 71W (Tc) Through Hole PG-TO262-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI180
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPI180N10N3 G
448-IPI180N10N3GXKSA1
SP000683076
IPI180N10N3G
IPI180N10N3GXKSA1-ND
2156-IPI180N10N3GXKSA1
IPI180N10N3 G-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI180N10N3GXKSA1
Dokumente und Medien
Datasheets
1(IPx180N10N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx180N10N3 G)
Simulation Models
1(MOSFET OptiMOS™ 100V N-Channel Spice Model)
Menge Preis
-
Stellvertreter
Teil Nr. : FDI150N10
Hersteller. : onsemi
Verfügbare Menge. : 3,338
Einzelpreis. : $2.84000
Ersatztyp. : Similar
Verfügbare Menge. : 3,338
Einzelpreis. : $2.84000
Ersatztyp. : Similar