Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
1T3G A1G
BESCHREIBUNG
DIODE GEN PURP 200V 1A TS-1
DETAILIERTE BESCHREIBUNG
Diode 200 V 1A Through Hole TS-1
HERSTELLER
Taiwan Semiconductor Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000

Technische Daten

Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Box (TB)
Product Status
Active
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
200 V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1 V @ 1 A
Speed
Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
5 µA @ 200 V
Capacitance @ Vr, F
10pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
T-18, Axial
Supplier Device Package
TS-1
Operating Temperature - Junction
-55°C ~ 150°C
Base Product Number
1T3G

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080

Andere Namen

1T3GA1G
1T3G A1G-ND

Kategorie

/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Taiwan Semiconductor Corporation 1T3G A1G

Dokumente und Medien

Datasheets
1(1T1G - 1T7G)
Environmental Information
()

Menge Preis

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