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ChinaSI3905DV-T1-E3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI3905DV-T1-E3
BESCHREIBUNG
MOSFET 2P-CH 8V 6TSOP
DETAILIERTE BESCHREIBUNG
Mosfet Array 8V 1.15W Surface Mount 6-TSOP
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
8V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
125mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.15W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
SI3905
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI3905DV-T1-E3
Dokumente und Medien
HTML Datasheet
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