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ChinaNMSD200B01-7
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NMSD200B01-7
BESCHREIBUNG
MOSFET N-CH 60V 200MA SOT363
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 200mA (Ta) 200mW (Ta) Surface Mount SOT-363
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
3Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id
3V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
200mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-363
Package / Case
6-TSSOP, SC-88, SOT-363
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
1034-NMSD200B01DITR
1034-NMSD200B01DIDKR
NMSD200B01DICT
NMSD200B01DKR-ND
NMSD200B01TR
NMSD200B01DIDKR
NMSD200B01DITR
NMSD200B01DKR
1034-NMSD200B01DICT
NMSD200B01CT
NMSD200B01CT-ND
NMSD200B017
NMSD200B01TR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated NMSD200B01-7
Dokumente und Medien
Datasheets
1(NMSD200B01-7)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Assembly/Origin
1(Mult Dev Assembly Chgs 5/May/2020)
HTML Datasheet
1(NMSD200B01-7)
Product Drawings
()
Menge Preis
-
Stellvertreter
-