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ChinaNTD4960N-35G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTD4960N-35G
BESCHREIBUNG
MOSFET N-CH 30V 8.9A/55A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 8.9A (Ta), 55A (Tc) 1.07W (Ta), 35.71W (Tc) Through Hole IPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8.9A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.07W (Ta), 35.71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Stub Leads, IPAK
Base Product Number
NTD49
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
NTD4960N-35GOS
2156-NTD4960N-35G-ON
ONSONSNTD4960N-35G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD4960N-35G
Dokumente und Medien
Datasheets
1(NTD4960N)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 30/Sept/2011)
HTML Datasheet
1(NTD4960N)
Menge Preis
-
Stellvertreter
Teil Nr. : IPD090N03LGATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 94,138
Einzelpreis. : $0.76000
Ersatztyp. : Similar
Verfügbare Menge. : 94,138
Einzelpreis. : $0.76000
Ersatztyp. : Similar