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ChinaAPTSM120TAM33CTPAG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APTSM120TAM33CTPAG
BESCHREIBUNG
SIC 6N-CH 1200V 112A SP6
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 112A (Tc) 714W Chassis Mount SP6
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
APTSM120TAM33CTPAG Models
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
112A (Tc)
Rds On (Max) @ Id, Vgs
33mOhm @ 60A, 20V
Vgs(th) (Max) @ Id
3V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
408nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
7680pF @ 1000V
Power - Max
714W
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP6
Supplier Device Package
SP6
Base Product Number
APTSM120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APTSM120TAM33CTPAG-ND
150-APTSM120TAM33CTPAG
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microsemi Corporation APTSM120TAM33CTPAG
Dokumente und Medien
Environmental Information
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EDA Models
1(APTSM120TAM33CTPAG Models)
Menge Preis
-
Stellvertreter
-