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TEILNUMMER DES HERSTELLERS
2SC2690-AZ
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR NPN
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 120 V 1.2 A 175MHz 1.2 W Through Hole TO-126
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
2SC2690-AZ Models
STANDARDPAKET
508
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1.2 A
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 200mA, 1A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 300mA, 5V
Power - Max
1.2 W
Frequency - Transition
175MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
RENRNS2SC2690-AZ
2156-2SC2690-AZ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SC2690-AZ
Dokumente und Medien
Datasheets
1(Datasheet)
EDA Models
1(2SC2690-AZ Models)
Menge Preis
QUANTITÄT: 508
Einzelpreis: $0.59
Verpackung: Bulk
MinMultiplikator: 508
Verpackung: Bulk
MinMultiplikator: 508
Stellvertreter
-