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ChinaIPI70N12S311AKSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPI70N12S311AKSA1
BESCHREIBUNG
MOSFET N-CHANNEL_100+
DETAILIERTE BESCHREIBUNG
N-Channel 120 V 70A (Tc) 125W (Tc) Through Hole PG-TO262-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
11.6mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4355 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI70N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IPI70N12S311AKSA1
SP001398610
INFINFIPI70N12S311AKSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI70N12S311AKSA1
Dokumente und Medien
Datasheets
1(IPx70N12S3-11)
Other Related Documents
1(Part Number Guide)
PCN Obsolescence/ EOL
1(Mult Dev EOL 9/Sep/2019)
Simulation Models
1(OptiMOS-T 120V Spice Model)
Menge Preis
QUANTITÄT: 321
Einzelpreis: $0.94
Verpackung: Bulk
MinMultiplikator: 321
Verpackung: Bulk
MinMultiplikator: 321
Stellvertreter
-