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ChinaSTP3NK100Z
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STP3NK100Z
BESCHREIBUNG
MOSFET N-CH 1000V 2.5A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 1000 V 2.5A (Tc) 90W (Tc) Through Hole TO-220
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
SuperMESH™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
601 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
90W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP3N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
STP3NK100Z-ND
-497-7524-5
497-7524-5
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STP3NK100Z
Dokumente und Medien
Datasheets
1(STx3NK100Z)
PCN Obsolescence/ EOL
1(Power MOSFET Transistors 29/Jul/2013)
HTML Datasheet
1(STx3NK100Z)
Menge Preis
-
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