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ChinaFDP5645
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDP5645
BESCHREIBUNG
MOSFET N-CH 60V 80A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 80A (Ta) 125W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
102
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
107 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4468 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-65°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FDP5645-FS
FAIFSCFDP5645
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP5645
Dokumente und Medien
Datasheets
1(FDB5645)
Menge Preis
QUANTITÄT: 102
Einzelpreis: $2.95
Verpackung: Tube
MinMultiplikator: 102
Verpackung: Tube
MinMultiplikator: 102
Stellvertreter
-