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ChinaSIR838DP-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIR838DP-T1-GE3
BESCHREIBUNG
MOSFET N-CH 150V 35A PPAK SO-8
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 35A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
33mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2075 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
5.4W (Ta), 96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR838
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIR838DPT1GE3
SIR838DP-T1-GE3DKR
SIR838DP-T1-GE3CT
SIR838DP-T1-GE3TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIR838DP-T1-GE3
Dokumente und Medien
PCN Obsolescence/ EOL
1(SIL-0632014 16/Apr/2014)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SIR838DP)
Menge Preis
-
Stellvertreter
Teil Nr. : SI7738DP-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 4,827
Einzelpreis. : $2.93000
Ersatztyp. : Similar
Verfügbare Menge. : 4,827
Einzelpreis. : $2.93000
Ersatztyp. : Similar
Teil Nr. : BSC360N15NS3GATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 24,127
Einzelpreis. : $1.90000
Ersatztyp. : Similar
Verfügbare Menge. : 24,127
Einzelpreis. : $1.90000
Ersatztyp. : Similar