Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
84.5mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
30.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 600 V
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Base Product Number
E3M0065090