English
Spain
Rusia
Italy
ChinaSI7402DN-T1-E3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI7402DN-T1-E3
BESCHREIBUNG
MOSFET N-CH 12V 13A PPAK 1212-8
DETAILIERTE BESCHREIBUNG
N-Channel 12 V 13A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
5.7mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 4.5 V
Vgs (Max)
±8V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SI7402
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI7402DN-T1-E3
Dokumente und Medien
PCN Obsolescence/ EOL
1(PCN- SIL-0582013 05/Dec/2013)
HTML Datasheet
1(SI7402DN)
Menge Preis
-
Stellvertreter
-