Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
NTH4L015N065SC1
BESCHREIBUNG
SILICON CARBIDE MOSFET, NCHANNEL
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 142A (Tc) 500W (Tc) Through Hole TO-247-4L
HERSTELLER
onsemi
STANDARD LEADTIME
19 Weeks
EDACAD-MODELL
STANDARDPAKET
30

Technische Daten

Mfr
onsemi
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
142A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
18mOhm @ 75A, 18V
Vgs(th) (Max) @ Id
4.3V @ 25mA
Gate Charge (Qg) (Max) @ Vgs
283 nC @ 18 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
4790 pF @ 325 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

488-NTH4L015N065SC1CTINACTIVE-ND
488-NTH4L015N065SC1DKRINACTIVE-ND
488-NTH4L015N065SC1CT
488-NTH4L015N065SC1DKR-ND
488-NTH4L015N065SC1
488-NTH4L015N065SC1CTINACTIVE
2156-NTH4L015N065SC1
488-NTH4L015N065SC1DKR
488-NTH4L015N065SC1DKRINACTIVE
488-NTH4L015N065SC1TR
488-NTH4L015N065SC1CT-ND
488-NTH4L015N065SC1-ND
5556-NTH4L015N065SC1
488-NTH4L015N065SC1TR-ND

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTH4L015N065SC1

Dokumente und Medien

Datasheets
1(NTH4L015N065SC1)
Environmental Information
()
Featured Product
1(NTH4L EliteSiC N-Channel MOSFETs)

Menge Preis

QUANTITÄT: 510
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MinMultiplikator: 1
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Einzelpreis: $27.17
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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