Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
142A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
18mOhm @ 75A, 18V
Vgs(th) (Max) @ Id
4.3V @ 25mA
Gate Charge (Qg) (Max) @ Vgs
283 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
4790 pF @ 325 V
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L