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ChinaIRFD9123
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFD9123
BESCHREIBUNG
MOSFET P-CH 100V 1A 4DIP
DETAILIERTE BESCHREIBUNG
P-Channel 100 V 1A (Ta) Through Hole 4-HVMDIP
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
386
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Rds On (Max) @ Id, Vgs
600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
390 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Through Hole
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHARIRFD9123
2156-IRFD9123-HC
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRFD9123
Dokumente und Medien
Datasheets
1(IRFD9123)
Menge Preis
QUANTITÄT: 386
Einzelpreis: $0.78
Verpackung: Tube
MinMultiplikator: 386
Verpackung: Tube
MinMultiplikator: 386
Stellvertreter
-