English
Spain
Rusia
Italy
ChinaIRFI610G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFI610G
BESCHREIBUNG
MOSFET N-CH 200V 2.6A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 2.6A (Ta) Through Hole TO-220-3
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IRFI610
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFI610G
Dokumente und Medien
-
Menge Preis
-
Stellvertreter
-