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ChinaPDTA123EMB,315
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PDTA123EMB,315
BESCHREIBUNG
TRANS PREBIAS PNP 50V 0.1A 3DFN
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 180 MHz 250 mW Surface Mount DFN1006B-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
11,181
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
180 MHz
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
DFN1006B-3
Base Product Number
PDTA123
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-PDTA123EMB,315
NEXNEXPDTA123EMB,315
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTA123EMB,315
Dokumente und Medien
Datasheets
1(PDTA123EMB,315 Datasheet)
Menge Preis
QUANTITÄT: 11181
Einzelpreis: $0.03
Verpackung: Bulk
MinMultiplikator: 11181
Verpackung: Bulk
MinMultiplikator: 11181
Stellvertreter
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