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ChinaSTL33N60M2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STL33N60M2
BESCHREIBUNG
MOSFET N-CH 600V 22A PWRFLAT HV
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 22A (Tc) 190W (Tc) Surface Mount PowerFlat™ (8x8) HV
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
16 Weeks
EDACAD-MODELL
STL33N60M2 Models
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
MDmesh™ II Plus
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
135mOhm @ 10.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerFlat™ (8x8) HV
Package / Case
8-PowerVDFN
Base Product Number
STL33
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-497-14969-6
497-14969-2
497-14969-1
497-14969-6
-497-14969-2
-497-14969-1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STL33N60M2
Dokumente und Medien
Datasheets
1(STL33N60M2)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Design/Specification
()
PCN Assembly/Origin
1(IPD/15/9187 17/Apr/2015)
PCN Packaging
1(Material Barrier Bag 17/Dec/2020)
HTML Datasheet
1(STL33N60M2)
EDA Models
1(STL33N60M2 Models)
Menge Preis
QUANTITÄT: 3000
Einzelpreis: $2.21493
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 3000
Stellvertreter
-