Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FQI27N25TU
BESCHREIBUNG
MOSFET N-CH 250V 25.5A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 25.5A (Tc) 3.13W (Ta), 180W (Tc) Through Hole TO-262 (I2PAK)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQI27N25TU Models
STANDARDPAKET
1,000

Technische Daten

Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
25.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 12.75A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 180W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI27N25

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

FAIFSCFQI27N25TU
2156-FQI27N25TU-OS

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQI27N25TU

Dokumente und Medien

Datasheets
1(FQI27N25TU Datasheet)
Environmental Information
()
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Material Chgs 14/Oct/2020)
PCN Packaging
()
EDA Models
1(FQI27N25TU Models)

Menge Preis

-

Stellvertreter

Teil Nr. : IRF640NLPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 794
Einzelpreis. : $1.78000
Ersatztyp. : Similar
Teil Nr. : IRFSL31N20DTRL
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar
Teil Nr. : IRFSL31N20DTRR
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar