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ChinaVS-C12ET07T-M3
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TEILNUMMER DES HERSTELLERS
VS-C12ET07T-M3
BESCHREIBUNG
DIODE SIL CARB 650V 12A TO220AC
DETAILIERTE BESCHREIBUNG
Diode 650 V 12A Through Hole TO-220AC
HERSTELLER
Vishay General Semiconductor - Diodes Division
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Vishay General Semiconductor - Diodes Division
Series
-
Package
Tube
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 12 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr
65 µA @ 650 V
Capacitance @ Vr, F
515pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220AC
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
C12ET07
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Vishay General Semiconductor - Diodes Division VS-C12ET07T-M3
Dokumente und Medien
Featured Product
1(650 V Silicon Carbide Schottky Diodes)
PCN Obsolescence/ EOL
1(VS-CxxxP07L-M3 obs 16/Aug/2022)
Menge Preis
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Stellvertreter
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