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ChinaSIR798DP-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIR798DP-T1-GE3
BESCHREIBUNG
MOSFET N-CH 30V 60A PPAK SO-8
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 60A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.05mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5050 pF @ 15 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR798
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIR798DP-T1-GE3DKR
SIR798DP-T1-GE3TR
SIR798DP-T1-GE3CT
SIR798DP-T1-GE3-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIR798DP-T1-GE3
Dokumente und Medien
Datasheets
1(SIR798DP)
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SIR798DP)
Menge Preis
-
Stellvertreter
Teil Nr. : SIRC10DP-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 5,967
Einzelpreis. : $0.84000
Ersatztyp. : Similar
Verfügbare Menge. : 5,967
Einzelpreis. : $0.84000
Ersatztyp. : Similar