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ChinaRJK0366DPA-02#J0B
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RJK0366DPA-02#J0B
BESCHREIBUNG
MOSFET N-CH 30V 25A 8WPAK
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 25A (Ta) 30W (Tc) Surface Mount 8-WPAK
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
325
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
25A (Ta)
Rds On (Max) @ Id, Vgs
10mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
1010 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-WPAK
Package / Case
8-WFDFN Exposed Pad
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-RJK0366DPA-02#J0B-RETR-ND
RENRNSRJK0366DPA-02#J0B
2156-RJK0366DPA-02#J0B
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK0366DPA-02#J0B
Dokumente und Medien
Datasheets
1(RJK0366DPA-02#J0B)
Menge Preis
QUANTITÄT: 325
Einzelpreis: $0.92
Verpackung: Bulk
MinMultiplikator: 325
Verpackung: Bulk
MinMultiplikator: 325
Stellvertreter
-