Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FDD2570
BESCHREIBUNG
MOSFET N-CH 150V 4.7A TO252
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 4.7A (Ta) 3.2W (Ta), 70W (Tc) Surface Mount TO-252 (DPAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
207

Technische Daten

Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
80mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1907 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
3.2W (Ta), 70W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-FDD2570
2156-FDD2570-FSTR-ND
FAIFSCFDD2570

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDD2570

Dokumente und Medien

Datasheets
1(FDD2570)

Menge Preis

QUANTITÄT: 207
Einzelpreis: $1.46
Verpackung: Bulk
MinMultiplikator: 207

Stellvertreter

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