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ChinaFGH50N6S2D
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FGH50N6S2D
BESCHREIBUNG
INSULATED GATE BIPOLAR TRANSISTO
DETAILIERTE BESCHREIBUNG
IGBT 600 V 75 A 463 W Through Hole TO-247
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
29
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
75 A
Current - Collector Pulsed (Icm)
240 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 30A
Power - Max
463 W
Switching Energy
260µJ (on), 250µJ (off)
Input Type
Standard
Gate Charge
70 nC
Td (on/off) @ 25°C
13ns/55ns
Test Condition
390V, 30A, 3Ohm, 15V
Reverse Recovery Time (trr)
55 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
FAIFSCFGH50N6S2D
2156-FGH50N6S2D
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Fairchild Semiconductor FGH50N6S2D
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 29
Einzelpreis: $10.64
Verpackung: Bulk
MinMultiplikator: 29
Verpackung: Bulk
MinMultiplikator: 29
Stellvertreter
-