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ChinaAPTMC120HR11CT3G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APTMC120HR11CT3G
BESCHREIBUNG
SIC 2N-CH 1200V 26A SP3
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 26A (Tc) 125W Chassis Mount SP3
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Rds On (Max) @ Id, Vgs
98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
62nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
950pF @ 1000V
Power - Max
125W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP3
Supplier Device Package
SP3
Base Product Number
APTMC120
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APTMC120HR11CT3G-ND
150-APTMC120HR11CT3G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microsemi Corporation APTMC120HR11CT3G
Dokumente und Medien
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1(APTMC120HR11CT3G)
Environmental Information
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HTML Datasheet
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Menge Preis
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Stellvertreter
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