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ChinaNP80N055PDG-E1B-AY
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NP80N055PDG-E1B-AY
BESCHREIBUNG
MOSFET N-CH 55V 80A TO263
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 80A (Tc) 1.8W (Ta), 115W (Tc) Surface Mount TO-263
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
161
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
6.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
6900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 115W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-NP80N055PDG-E1B-AY-RETR
RENRNSNP80N055PDG-E1B-AY
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation NP80N055PDG-E1B-AY
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 161
Einzelpreis: $1.87
Verpackung: Bulk
MinMultiplikator: 161
Verpackung: Bulk
MinMultiplikator: 161
Stellvertreter
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