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ChinaRFD10P03LSM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RFD10P03LSM
BESCHREIBUNG
MOSFET P-CH 30V 10A TO252-3
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 10A (Tc) Surface Mount TO-252AA
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Rds On (Max) @ Id, Vgs
200mOhm @ 10A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1035 pF @ 25 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
-
Base Product Number
RFD10
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi RFD10P03LSM
Dokumente und Medien
Datasheets
1(RFD10P03L/LSM, RFP10P03L)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(RFD10P03L/LSM, RFP10P03L)
Menge Preis
-
Stellvertreter
-