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ChinaBSC889N03MSG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSC889N03MSG
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 12A (Ta), 44A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount PG-TSDSON-8
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,154
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™ 3
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 28W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TSDSON-8
Package / Case
8-PowerTDFN
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-BSC889N03MSG
IFEINFBSC889N03MSG
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC889N03MSG
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1154
Einzelpreis: $0.26
Verpackung: Bulk
MinMultiplikator: 1154
Verpackung: Bulk
MinMultiplikator: 1154
Stellvertreter
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