Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
BSB015N04NX3GXUMA1
BESCHREIBUNG
MOSFET N-CH 40V 36A/180A 2WDSON
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 36A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
36A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
142 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12000 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2, CanPAK M™
Package / Case
3-WDSON

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-BSB015N04NX3GXUMA1
BSB015N04NX3 G
BSB015N04NX3 GDKR-ND
SP000597852
BSB015N04NX3 GCT
BSB015N04NX3GXUMA1CT
BSB015N04NX3 GTR-ND
IFEINFBSB015N04NX3GXUMA1
BSB015N04NX3GXUMA1DKR
BSB015N04NX3 GCT-ND
BSB015N04NX3 GDKR
BSB015N04NX3 G-ND
BSB015N04NX3GXUMA1TR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSB015N04NX3GXUMA1

Dokumente und Medien

Datasheets
1(BSB015N04NX3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSB015N04NX3 G)
Simulation Models
1(MOSFET OptiMOS™ 40V N-Channel Spice Model)

Menge Preis

-

Stellvertreter

Teil Nr. : NTMFS5C430NT1G
Hersteller. : onsemi
Verfügbare Menge. : 2,720
Einzelpreis. : $1.79000
Ersatztyp. : Similar