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ChinaFQI47P06TU
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TEILNUMMER DES HERSTELLERS
FQI47P06TU
BESCHREIBUNG
MOSFET P-CH 60V 47A I2PAK
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 47A (Tc) 3.75W (Ta), 160W (Tc) Through Hole TO-262 (I2PAK)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQI47P06TU Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
26mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 160W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI4
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQI47P06TU
Dokumente und Medien
Datasheets
1(FQB47P06, FQI47P06)
Environmental Information
()
HTML Datasheet
1(FQB47P06, FQI47P06)
EDA Models
1(FQI47P06TU Models)
Menge Preis
-
Stellvertreter
-