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ChinaNTMFS4120NT1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTMFS4120NT1G
BESCHREIBUNG
MOSFET N-CH 30V 11A 5DFN
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 11A (Ta) 900mW (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3600 pF @ 24 V
FET Feature
-
Power Dissipation (Max)
900mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Package / Case
8-PowerTDFN, 5 Leads
Base Product Number
NTMFS4
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
NTMFS4120NT1G-ND
ONSONSNTMFS4120NT1G
NTMFS4120NT1GOSTR
2156-NTMFS4120NT1G
NTMFS4120NT1GOSCT
2156-NTMFS4120NT1G-ONTR-ND
=NTMFS4120NT1GOSCT-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTMFS4120NT1G
Dokumente und Medien
Datasheets
1(NTMFS4120NT1G)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 21/Jan/2010)
HTML Datasheet
1(NTMFS4120NT1G)
Menge Preis
-
Stellvertreter
-