Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
45mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
595 pF @ 10 V
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)