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ChinaTK1P90A,LQ(CO
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TEILNUMMER DES HERSTELLERS
TK1P90A,LQ(CO
BESCHREIBUNG
MOSFET N-CH 900V 1A PW-MOLD
DETAILIERTE BESCHREIBUNG
N-Channel 900 V 1A (Ta) 20W (Tc) Surface Mount PW-MOLD
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
320 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
20W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
PW-MOLD
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
TK1P90
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK1P90A,LQ(CO
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