Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
C3M0075120K
BESCHREIBUNG
SICFET N-CH 1200V 30A TO247-4L
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 30A (Tc) 113.6W (Tc) Through Hole TO-247-4L
HERSTELLER
Wolfspeed, Inc.
STANDARD LEADTIME
34 Weeks
EDACAD-MODELL
C3M0075120K Models
STANDARDPAKET
30

Technische Daten

Mfr
Wolfspeed, Inc.
Series
C3M™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 15 V
Vgs (Max)
+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
113.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Base Product Number
C3M0075120

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Andere Namen

C3M0075120K-ND
1697-C3M0075120K
-3312-C3M0075120K

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Wolfspeed, Inc. C3M0075120K

Dokumente und Medien

Datasheets
1(C3M0075120K)
Featured Product
()
PCN Design/Specification
()
Article Library
1(Use SiC-Based MOSFETs to Improve Power Conversion Efficiency)
EDA Models
1(C3M0075120K Models)

Menge Preis

QUANTITÄT: 510
Einzelpreis: $13.90924
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $16.29992
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $17.38667
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $20.97
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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