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ChinaAPTC60DDAM70CT1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APTC60DDAM70CT1G
BESCHREIBUNG
MOSFET 2N-CH 600V 39A SP1
DETAILIERTE BESCHREIBUNG
Mosfet Array 600V 39A 250W Chassis Mount SP1
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
CoolMOS™
Package
Bulk
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Super Junction
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25°C
39A
Rds On (Max) @ Id, Vgs
70mOhm @ 39A, 10V
Vgs(th) (Max) @ Id
3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs
259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
7000pF @ 25V
Power - Max
250W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP1
Supplier Device Package
SP1
Base Product Number
APTC60
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APTC60DDAM70CT1G-ND
150-APTC60DDAM70CT1G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microsemi Corporation APTC60DDAM70CT1G
Dokumente und Medien
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Menge Preis
-
Stellvertreter
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