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ChinaIXFT80N65X2HV-TRL
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFT80N65X2HV-TRL
BESCHREIBUNG
MOSFET N-CH 650V 80A TO268HV
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 80A (Tc) 890W (Tc) Surface Mount TO-268HV (IXFT)
HERSTELLER
IXYS
STANDARD LEADTIME
47 Weeks
EDACAD-MODELL
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™, Ultra X2
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
38mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
8300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
890W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268HV (IXFT)
Package / Case
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Base Product Number
IXFT80
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFT80N65X2HV-TRL
Dokumente und Medien
Environmental Information
1(Ixys IC REACH)
Featured Product
1(Power MOSFETs 600 V to 700 V with HiPerFET™ Option - X2-Class Series)
PCN Design/Specification
1(Mult Dev MSL3 Pkg Chg 9/Jun/2020)
PCN Packaging
1(Multiple Devices MSL 09/Jun/2020)
Menge Preis
QUANTITÄT: 800
Einzelpreis: $10.68455
Verpackung: Tape & Reel (TR)
MinMultiplikator: 400
Verpackung: Tape & Reel (TR)
MinMultiplikator: 400
QUANTITÄT: 400
Einzelpreis: $11.42143
Verpackung: Tape & Reel (TR)
MinMultiplikator: 400
Verpackung: Tape & Reel (TR)
MinMultiplikator: 400
Stellvertreter
-