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ChinaFDM2509NZ
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDM2509NZ
BESCHREIBUNG
MOSFET 2N-CH 20V 8.7A MICRO2X2
DETAILIERTE BESCHREIBUNG
Mosfet Array 20V 8.7A 800mW Surface Mount MicroFET 2x2 Thin
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
807
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
8.7A
Rds On (Max) @ Id, Vgs
18mOhm @ 8.7A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 10V
Power - Max
800mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-UDFN Exposed Pad
Supplier Device Package
MicroFET 2x2 Thin
Base Product Number
FDM2509
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-FDM2509NZ
FAIFSCFDM2509NZ
2156-FDM2509NZ-FSTR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Fairchild Semiconductor FDM2509NZ
Dokumente und Medien
Datasheets
1(FDM2509NZ)
Menge Preis
QUANTITÄT: 807
Einzelpreis: $0.37
Verpackung: Bulk
MinMultiplikator: 807
Verpackung: Bulk
MinMultiplikator: 807
Stellvertreter
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