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ChinaC2M1000170J-TR
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
C2M1000170J-TR
BESCHREIBUNG
SICFET N-CH 1700V 5.3A D2PAK-7
DETAILIERTE BESCHREIBUNG
N-Channel 1700 V 5.3A (Tc) 78W (Tc) Surface Mount TO-263-7
HERSTELLER
Wolfspeed, Inc.
STANDARD LEADTIME
34 Weeks
EDACAD-MODELL
C2M1000170J-TR Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Wolfspeed, Inc.
Series
C2M™
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
C2M1000170
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Wolfspeed, Inc. C2M1000170J-TR
Dokumente und Medien
Datasheets
1(C2M1000170J)
Featured Product
1(1700 V Silicon Carbide (SiC) MOSFETs and Diodes)
Article Library
1(Use SiC-Based MOSFETs to Improve Power Conversion Efficiency)
HTML Datasheet
1(C2M1000170J)
EDA Models
1(C2M1000170J-TR Models)
Menge Preis
QUANTITÄT: 800
Einzelpreis: $7.36644
Verpackung: Tape & Reel (TR)
MinMultiplikator: 800
Verpackung: Tape & Reel (TR)
MinMultiplikator: 800
Stellvertreter
-