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TEILNUMMER DES HERSTELLERS
SIDC11D60SIC3
BESCHREIBUNG
DIODE SIL CARB 600V 4A WAFER
DETAILIERTE BESCHREIBUNG
Diode 600 V 4A Surface Mount Sawn on foil
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,459
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Discontinued at allaboutcomponents.com
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
4A
Voltage - Forward (Vf) (Max) @ If
1.9 V @ 4 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
200 µA @ 600 V
Capacitance @ Vr, F
150pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Sawn on foil
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
SIDC11
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Infineon Technologies SIDC11D60SIC3
Dokumente und Medien
Datasheets
1(SIDC11D60SIC3)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(SIDC11D60SIC3)
Menge Preis
-
Stellvertreter
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