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ChinaG2R50MT33K
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
G2R50MT33K
BESCHREIBUNG
3300V 50M TO-247-4 SIC MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 3300 V 63A (Tc) 536W (Tc) Through Hole TO-247-4
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
26 Weeks
EDACAD-MODELL
G2R50MT33K Models
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
GeneSiC Semiconductor
Series
G2R™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
3300 V
Current - Continuous Drain (Id) @ 25°C
63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
3.5V @ 10mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
340 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
7301 pF @ 1000 V
FET Feature
Standard
Power Dissipation (Max)
536W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/GeneSiC Semiconductor G2R50MT33K
Dokumente und Medien
Datasheets
1(G2R50MT33K)
EDA Models
1(G2R50MT33K Models)
Menge Preis
QUANTITÄT: 25
Einzelpreis: $270.7096
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $277.594
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $295.67
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-