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China71V35761SA200BQG8
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TEILNUMMER DES HERSTELLERS
71V35761SA200BQG8
BESCHREIBUNG
IC SRAM 4.5MBIT PAR 165CABGA
DETAILIERTE BESCHREIBUNG
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 165-CABGA (13x15)
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
36 Weeks
EDACAD-MODELL
STANDARDPAKET
2,000
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Active
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Synchronous, SDR
Memory Size
4.5Mbit
Memory Organization
128K x 36
Memory Interface
Parallel
Clock Frequency
200 MHz
Write Cycle Time - Word, Page
-
Access Time
3.1 ns
Voltage - Supply
3.135V ~ 3.465V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
Surface Mount
Package / Case
165-TBGA
Supplier Device Package
165-CABGA (13x15)
Base Product Number
71V35761S
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Andere Namen
IDT71V35761SA200BQG8-ND
IDT71V35761SA200BQG8
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Renesas Electronics Corporation 71V35761SA200BQG8
Dokumente und Medien
Datasheets
()
PCN Packaging
1(All Dev Label Chg 1/Dec/2022)
HTML Datasheet
1(IDT Suffixes)
Menge Preis
QUANTITÄT: 2000
Einzelpreis: $11.70015
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 2000
Stellvertreter
-