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ChinaSIHF530-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIHF530-GE3
BESCHREIBUNG
MOSFET N-CH 100V 14A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 14A (Tc) 88W (Tc) Through Hole TO-220AB
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
160mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
88W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SIHF530
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
742-SIHF530-GE3DKR-ND
742-SIHF530-GE3CT
742-SIHF530-GE3TR
742-SIHF530-GE3DKR
742-SIHF530-GE3DKRINACTIVE
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHF530-GE3
Dokumente und Medien
Datasheets
1(IRF530)
PCN Assembly/Origin
1(Mult Dev Material Chg 30/Aug/2019)
Menge Preis
-
Stellvertreter
-