Mfr
Toshiba Semiconductor and Storage
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
6A
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 6 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
30 µA @ 650 V
Capacitance @ Vr, F
22pF @ 650V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack
Supplier Device Package
TO-220F-2L
Operating Temperature - Junction
175°C (Max)
Base Product Number
TRS6A65